Tantalum mononitride is a chemical material with a formula of TaN and a molecular weight of 194.95
Tantalum nitride is a black hexagonal crystal. Relative density 13.4, melting point is 3090 ℃, microhardness is 1100 kg/was, thermal conductivity is 9.54 W/(m, K), the resistivity of 128 mu Ω · cm.
Partial tantalum nitride is yellowish green crystal, belongs to sodium chloride type crystal, the relative density is 15.6. Lattice constant is a=0.4336nm, c=0.4150nm. Melting point is 2950 ℃, microhardness is 3200 kg/was, inversion point temperature is 17.8 K.
Insoluble in water, acid, slightly soluble in aqua regia, dissolved in potassium hydroxide and decompose release ammonia, heated to 2000 ℃ or release nitrogen.
Tantalum nitride Sulphur target
Max size 2000L×250W, Max Diameter 400mm .Special specification can be provided according to customer requirements
99.9% , 99.99% ,99.999%
Type of Bonding
RIndium RElastomer RSilver Adhesive RAgCu
The material used to make the precise chip resistance is tantalum nitride resistant to water vapour erosion. In the process of manufacturing an integrated circuit, these membranes are deposited on the top of the silicon wafer to form a film surface attached to a resistor.
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