silicon carbide Sputtering Target SiC

silicon carbide Sputtering Target SiC

Goodwill Metal Tech manufactures silicon carbide Sputtering Target SiC. Our product is consistently good in quality and purity. We also makes doped targets by customer request.

Product Details

Specification

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The emery, also known as silicon carbide (SiC), is made from materials such as quartz sand, 

petroleum coke (or coal coke), wood chips (adding salt when producing green silicon carbide) and so on by smelting at high temperature in a resistive furnace. 

Silicon carbide also has a rare mineral in nature, mulberry. 

Silicon carbide. Among the non-oxide high-tech refractory raw materials such as C, N and B, silicon carbide is the most widely used and most economical one. 

At present, the silicon carbide produced by Chinese industry is divided into black silicon carbide and green silicon carbide,

 both of which are hexagonal crystals with a proportion of 3.20 ~ 3.25 and a microhardness of 2840 ~ 3320kg/mm2

Product name

 Silicon Carbide  target

Symbol

 SiC

Manfucture method

Smelting

Size

Max size 2000L×250W, Max Diameter 400mm .Special specification can be provided according to customer requirements

Density

 3.22 g/cm3

Purity

99.9% , 99.99% ,99.999%

Melting Point

2700 °C 

Grain size

<100um

Type of Bonding

RIndium         RElastomer        RSilver Adhesive    RAgCu


Application

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RArchitectural automotive glass

RSolar PV & Solar heating & Solar Cell 

RDecoration and Tool & Die

RResistive element 

RFLat Panel Display and Touch panel industry 

R Solid Electrolyte Fuel Cell (SOFC) 

Rsemiconductor&Electronic industry


Analytical testing 

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Our company has advanced laser particle size analyzer, powder specific surface area analyzer, metallographic microscope, scanning electron microscope, projection electron microscope, X-ray diffraction (XRD) and other professional material testing equipment, which can analyze powder particle size, particle size distribution, material metallographic structure, scanning structure, and phase structure.

 

ICP-AES (inductively coupled plasma emission spectrometer) is used for the analysis of trace elements. The elements that can be analyzed are most metals and a few non-metals such as silicon, phosphorus and sulfur.It has fast analysis speed, wide test range, small collective effect, small analysis dynamic range, and can quickly and accurately test impurities and analyze the purity of materials.

 

PDS ultrasonic inspection (C-SCAN) is used for the analysis of impurities, pores, cracks and other defects in metal and non-metal materials as well as the detection of product welding bonding rate. It has the advantages of high sensitivity, convenient operation, no damage and high precision.

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