Aluminum Nitride evaporation materials
Aluminum Nitride (AlN)
Aluminum Nitride Sputtering Targets
Purity--- 99%, 99.9%
Shape--- Discs, Plate,Step (Dia ≤480mm,Thickness ≥1mm)
Rectangle, Sheet,Step (Length ≤400mm, Width ≤200mm, Thickness ≥1mm)
Tube( Diameter< 300mm,Thickness >2mm )
Application - surface acoustic wave sensors (SAWs), RF filter, film bulk acoustic resonator...
Aluminum Nitride Ceramic Substrate (AlN Ceramic)
Purity - 99.9%
Shape - Discs, Rectangle, Step, Plates, Sheets, Rods, Custom-Made
Dimension - Diameter (≤480mm),Length (≤400mm), Width (≤300mm), Thickness (≥1mm), Custom-Made
Aluminum Nitride Powder - AlN
Purity - 99.9%
Shape - powder
Dimension - size base on your needs
Application - raw material..
Aluminum Nitride Nanometer Powder
Purity---99% Oxygen content --- <0.8wt% Dissociative Si% 0.2
Color --- offwhite Crystallographic phase --- Hexagonal
Average particle size (D50) --- <50nm
Specific surface area--- >78m2/g
Apparent density ---0.12g/cm3
Manufacture method --- Plasma arc vapor
Application ---Nano Aluminum nitride primary used in integrate circuit subtract, electronic devices, optical devices, thermal emission devices,crucibles used at high temperatures,preparation of composites of metal matrixes and polymer matrixes,expecially,in the high temperature seal binders and electronic encapsulation materials,Nano-ALN will be substantially applied in future.
Store --- It should be storing the cool and dry rooms without solar light. The product cannot be in big compression. In the use process of Nano-ALN powders, in order to avoid the powder aggregating caused by absorbing moistness and thus affecting application effects,the Nano-ALN powder can be not exposed in air.
Aluminum Nitride Preference
Aluminum nitride devices have high hardness, high modulus, very high dielectric properties, good oxidationresistant property and low-thermal expansion efficient, which is approximate to that of Silicon. When the AlN powers is used to make composites its interface compatibleness is good . It can improve mechanical properties, thermal conductance and dielectric properties of composites.
Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics.
Aluminum Nitride (AlN) is a unique ceramic material that combines high thermal conductivity with high electrical resistivity. Only a few ceramics possess high thermal conductivity: Beryllium Oxide (BeO) and cubic Boron Nitride (c-BN) are virtually the only other examples. However, the use of BeO is restricted due to its toxicity, and c-BN is very difficult to produce.
Stability and chemical properties
The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite.
Aluminium nitride is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.
Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.
Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In May 2006, an inefficient AlN LED emission at 210 nm was reported.
There are also multiple research efforts in industry and academia to use aluminum nitride in piezoelectric MEMS applications. These include resonators, gyroscopes and microphones.
Among the applications of AlN are opto-electronics, dielectric layers in optical storage media, electronic substrates, chip carriers where high thermal conductivity is essential, military applications, as a crucible to grow crystals of gallium arsenide, steel and semiconductor manufacturing.
Names: Aluminium nitride
Solubility in water:reacts (powder), insoluble (monocrystalline)
Refractive index (nD):1.9–2.2
Std enthalpy of formation (ΔfHo298):318 kJ/mol